METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

摘要

A method of processing a substrate includes: growing a first layer including a first element and a second element by supplying a first precursor containing the first element and a second precursor containing the second element to the substrate; and growing a second layer including the second element and a third element by supplying the second precursor and a third precursor containing the third element to the substrate. The act of growing the first layer and the act of growing the second layer are alternately performed a predetermined number of times, and the act of growing the first layer is performed before the act of growing the second layer to selectively grow a laminated film on a conductive film exposed on the surface of the substrate. The first layer and the second layer are laminated to form the laminated film.

主权项

1. A method of processing a substrate, comprising:
growing a first layer including a first element and a second element by supplying a first precursor containing the first element and a second precursor containing the second element to the substrate, an insulating film, and a conductive film containing at least one selected from a group consisting of a metal element, a semi-metal element, and a semiconductor element being exposed on a surface of the substrate; and growing a second layer including the second element and a third element by supplying the second precursor and a third precursor containing the third element to the substrate, wherein the act of growing the first layer and the act of growing the second layer are alternately performed a predetermined number of times, and the act of growing the first layer is performed before the act of growing the second layer to selectively grow a laminated film on the conductive film exposed on the surface of the substrate, the first layer and the second layer being laminated to form the laminated film.