Method and Structure for FinFET Device

摘要

The present disclosure describes a fin-like field-effect transistor (FinFET). The device includes one or more fin structures over a substrate, each with source/drain (S/D) features and a high-k/metal gate (HK/MG). A first HK/MG in a first gate region wraps over an upper portion of a first fin structure, the first fin structure including an epitaxial silicon (Si) layer as its upper portion and an epitaxial growth silicon germanium (SiGe), with a silicon germanium oxide (SiGeO) feature at its outer layer, as its middle portion, and the substrate as its bottom portion. A second HK/MG in a second gate region, wraps over an upper portion of a second fin structure, the second fin structure including an epitaxial SiGe layer as its upper portion, an epitaxial Si layer as it upper middle portion, an epitaxial SiGe layer as its lower middle portion, and the substrate as its bottom portion.

主权项

1. A fin-like field-effect transistor (FinFET) device comprising:
a substrate having a fin-like field-effect transistor (FET) region; first source/drain (S/D) regions, separated by a first gate region in the FET region; a first high-k/metal gate (HK/MG) in the first gate region, including wrapping over an upper portion of a first fin structure, the first fin structure including: an epitaxial silicon (Si) layer as its upper portion; an epitaxial growth silicon germanium (SiGe), with a silicon germanium oxide (SiGeO) feature at its outer layer, as its middle portion; and the substrate as its bottom portion; and a first S/D feature on top of the first fin structure, having a recessed Si layer, in the first S/D region, the first S/D feature including: a Si:C layer as its lower portion; and a Si:P layer as its upper portion.