METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR DEVICE, SURFACE TREATMENT METHOD, COMPOUND AND ORGANIC SEMICONDUCTOR DEVICE

摘要

While it is known that only an n-type semiconductor property is obtained by forming an injection blocking layer for hole carriers of CsF on a semiconductor layer in a semiconductor device including an ambipolar-type organic semiconductor, there has been a possibility that the organic semiconductor layer is damaged in the process of forming the injection blocking layer. A method for manufacturing an organic semiconductor comprises: a step for preparing a gate insulating layer; a step for forming a self-assembled monolayer on one surface of the gate insulating layer; and a step for forming a semiconductor layer including an ambipolar-type organic semiconductor on a surface of the self-assembled monolayer on which the gate insulating layer is not provided. The self-assembled monolayer keeps one of a p-type semiconductor property or an n-type semiconductor property of the ambipolar-type organic semiconductor activated while deactivating the other.