SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a structure and a manufacturing method of a storage device which can perform reset by using a reset gate and reduce cross sectional areas of a phase change film and a lower electrode in a direction in which a current flows.SOLUTION: A storage device comprises memory elements each including: a columnar insulator layer; a phase change film formed around an upper part of the columnar insulator layer; a lower electrode which is formed around a lower part of the columnar insulator layer and connected to the phase change film; a reset gate insulation film which surrounds the phase change film; and a reset gate which surrounds the reset gate insulation film. In the storage device, more than one row and more than one column of the storage elements are arranged, the reset gate is connected to the row direction and column direction, and the reset gate is a heater.SELECTED DRAWING: Figure 1