发明名称 |
PHOTONIC DEVICES BY ORGANO-METALLIC HALIDES BASED PEROVSKITES MATERIAL AND ITS METHOD OF PREPARATION |
摘要 |
Disclosed is a photonic device for electroluminescence application and its method of preparation wherein device comprises a perovskite semiconductor film layer disposed between a n-type region and a p-type region, wherein the perovskite semiconductor film layer is made of an organo-metallic halide (ABX3) and is tuned to a band gap, wherein the band gap varies from NIR to visible range at room temperature and at least two inter layers, the at least two inter layers incorporated between the p-type region and perovskite semiconductor film layer and the n-type region and perovksite semiconductor film layer. |
申请公布号 |
WO2016009450(A3) |
申请公布日期 |
2016.03.24 |
申请号 |
WO2015IN00288 |
申请日期 |
2015.07.16 |
申请人 |
INDIAN INSTITUTE OF TECHNOLOGY BOMBAY |
发明人 |
KABRA DINESH;KUMAWAT KUMAR NARESH;DEY AMRITA |
分类号 |
H01L51/50;H01L51/42;H01L51/52 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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