INTEGRATED VERTICAL TRENCH MOS TRANSISTOR

摘要

A VTMOS transistor in semiconductor material of a first type of conductivity includes a body region of a second type of conductivity and a source region of the first type of conductivity. A gate region extends into the main surface through the body region and is insulated from the semiconductor material. A region of the gate region extends onto the main surface is insulated from the rest of the gate region. An anode region of the first type of conductivity is formed into said insulated region, and a cathode region of the second type of conductivity is formed into said insulated region in contact with the anode region; the anode region and the cathode region define a thermal diode electrically insulated from the chip.

主权项

1. A method, comprising:
forming an electronic device having a vertical trench MOS transistor in a semiconductor substrate, wherein the forming of the electronic device includes:
forming a body region extending into the semiconductor substrate from a first surface of the semiconductor substrate;forming a source region extending into the body region from the first surface;forming an insulating layer overlying the first surface;forming a first conductive layer extending into the semiconductor substrate from the first surface through the body region, the first conductive layer being insulated from the semiconductor substrate by the insulating layer;forming a first conductive region and a second conductive region from the first conductive layer, the first conductive region being physically separated from the second conductive region; andforming a gate region from the second conductive region;forming a thermal diode adjacent to the gate region, the thermal diode and the gate region being positioned on the insulating layer, the thermal diode being electrically insulated from the semiconductor substrate by the insulating layer, wherein the forming of the thermal diode includes:
forming an anode region with a first portion of the first conductive region; andforming a cathode region with a second portion of the first conductive region.