发明名称 SEMICONDUCTOR DEVICES INCLUDING THROUGH-SILICON-VIAS AND METHODS OF MANUFACTURING THE SAME AND SEMICONDUCTOR PACKAGES INCLUDING THE SEMICONDUCTOR DEVICES
摘要 A semiconductor device can include a substrate that has a surface. A via structure can extend through the substrate toward the surface of the substrate, where the via structure includes an upper surface. A pad structure can be on the surface of the substrate, where the pad structure can include a lower surface having at least one protrusion that is configured to protrude toward the upper surface of the via structure.
申请公布号 US2016086874(A1) 申请公布日期 2016.03.24
申请号 US201514858572 申请日期 2015.09.18
申请人 Choi Ju-Il;Moon Kwang-Jin;Park Byung-Lyul;An Jin-Ho;Fujisaki Atsushi 发明人 Choi Ju-Il;Moon Kwang-Jin;Park Byung-Lyul;An Jin-Ho;Fujisaki Atsushi
分类号 H01L23/48;H01L23/532;H01L23/528;H01L23/00 主分类号 H01L23/48
代理机构 代理人
主权项 1. A semiconductor device, comprising: a via structure through a substrate, a portion of the via structure exposed above a top surface of the substrate, and the via structure having a top surface of which a central portion is concave and including: a via electrode including a conductive pattern and a barrier layer pattern surrounding a sidewall of the conductive pattern; andan insulation layer pattern surrounding a sidewall of the via electrode, wherein a top surface of the conductive pattern is lower than that of the insulation layer pattern and is flat, a protection layer pattern structure on the top surface of the substrate, the protection layer pattern structure surrounding a sidewall of the portion of the via structure that is exposed and including a photosensitive organic material; and a pad structure contacting a top surface of the portion of the via structure that is exposed, the pad structure having a flat top surface.
地址 Seongnam-Si KR