| 摘要 |
Alkoxyaminosilane compound having formula I, and processes and compositions for depositing a silicon-containing film, are described herein:;(R1R2)NSiR3OR4OR5 Formula (I);wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group. |
| 主权项 |
1. An alkoxyaminosilane for depositing a silicon-containing film selected from the group consisting of di-ethoxy(tert-butylamino)methylsilane, diethoxy(tert-pentylamino)methylsilane, diethoxy(iso-propoxyamino)methylsilane, diethoxy(tert-butylamino)methylsilane, diethoxy(tert-pentylamino)methylsilane, diethoxy(iso-propoxyamino)methylsilane, di-tert-butoxy(methylamino)methylsilane, di-tert-butoxy(ethylamino)methylsilane, ditert-butoxy(iso-propylamino)methylsilane, di-tert-butoxy(n-butylamino)methylsilane, di-tert-butoxy(sec-butylamino)methylsilane, di-tert-butoxy(iso-butylamino)methylsilane, di-tert-butoxy(tert-butylamino)methylsilane, di-tert-pentoxy(methylamino)methylsilane, di-tert-pentoxy(ethylamino)methylsilane, di-tert-pentoxy(iso-propylamino)methylsilane, di-tert-pentoxy(n-butylamino)methylsilane, di-tert-pentoxy(sec-butylamino)methylsilane, di-tert-pentoxy(iso-butylamino)methylsilane, di-tert-pentoxy(tert-butylamino)methylsilane, dimethoxy(phenylmethylamino)methylsilane, and diethoxy(phenylmethylamino)methylsilane. |
