发明名称 半導体装置
摘要 The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current.
申请公布号 JP5893681(B2) 申请公布日期 2016.03.23
申请号 JP20140128798 申请日期 2014.06.24
申请人 株式会社半導体エネルギー研究所 发明人 山崎 舜平;小山 潤
分类号 H01L29/786;H01L21/336;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H01L27/088 主分类号 H01L29/786
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