发明名称 半導体装置の評価方法
摘要 PROBLEM TO BE SOLVED: To provide a method for evaluating a semiconductor device, capable of achieving sufficient detection accuracy of a partial discharge with a simple configuration.SOLUTION: The method for evaluating a semiconductor device comprises: an evaluation step of evaluating electrical characteristics of a semiconductor device; a step of detecting the temperature of the semiconductor device by using a temperature monitor element attached to the semiconductor device during the evaluation step; a step of, when the detected temperature of the semiconductor device exceeds a predetermined threshold, determining that a discharge has occurred in the semiconductor device of which the temperature is detected; and a step of identifying a discharge point in the semiconductor device in which it is determined that the discharge has occurred.
申请公布号 JP5892912(B2) 申请公布日期 2016.03.23
申请号 JP20120253817 申请日期 2012.11.20
申请人 三菱電機株式会社 发明人 岡田 章;野口 貴也;秋山 肇;山下 欽也
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
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