发明名称 |
NANOSTRUCTURED UNITS FORMED INSIDE A SILICON MATERIAL AND THE MANUFACTURING PROCESS TO PERFORM THEM THEREIN |
摘要 |
The invention bears on elementary nanoscale units nanostructured-formed inside a silicon material and the manufacturing process to implement them. Each elementary nanoscale unit is created by means of a limited displacement of two Si atoms outside a crystal elementary unit. A localized nanoscale transformation of the crystalline matter gets an unusual functionality by focusing in it a specific physical effect as is a highly useful additional set of electron energy levels that is optimized for the solar spectrum conversion to electricity. An adjusted energy set allows a low-energy secondary electron generation in a semiconductor, preferentially silicon, material for use especially in very-high efficiency all-silicon light-to-electricity converters. The manufacturing process to create such transformations in a semiconductor material bases on a local energy deposition like ion implantation or electron beam irradiation and suitable thermal treatment and is industrially easily available. |
申请公布号 |
EP2997604(A2) |
申请公布日期 |
2016.03.23 |
申请号 |
EP20140795861 |
申请日期 |
2014.05.13 |
申请人 |
SEGTON ADVANCED TECHNOLOGY SAS |
发明人 |
KUZNICKI, ZBIGNIEW;MEYRUEIS, PATRICK |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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