| 摘要 |
The purpose of the present invention is to provide: a sputtering target which enables the production of a high-resistance transparent film even by DC sputtering; a high-resistance transparent film; and a method for producing the high-resistance transparent film. The sputtering target comprises a sintered oxide compact that contains zinc oxide as the main component and has such a component composition that at least one element selected from the element group consisting of In, Ga, Al and B is contained in an amount of 0.005 to 0.1 at.% relative to the total amount of the metal components, wherein the sintered oxide compact has a density of 5.3 g/cm3 or more. The high-resistance transparent film is produced by the DC sputtering using the sputtering target and has a volume resistivity of 1×104 Omega·cm or more. |
