Lateral avalanche photodiode device and method of production

摘要

A lateral avalanche photodiode device comprises a semiconductor substrate (1) having a trench (4) with side walls (5) extending from a main surface (2) to a rear surface (3). A first doped region (11) is present at the side walls of the trench, and a second doped region (12) is arranged at a distance from the first doped region. A third doped region (13) is located adjacent to the first doped region, extends through the substrate from the main surface to the rear surface, and is arranged between the first doped region and the second doped region. The third doped region (13) is the avalanche multiplication region of the photodiode structure. The second doped region and the third doped region have a first type of conductivity, and the first doped region has a second type of conductivity which is opposite to the first type of conductivity. The region of the substrate that is between the first doped region and the second doped region is of the first type of conductivity.

主权项

1. A lateral avalanche photodiode device, comprising:
a semiconductor substrate (1) with a main surface (2) and a rear outer surface (3) opposite to the main surface (2), a trench (4) with a side wall (5) in the substrate (1), a first doped region (11) at the side wall (5) of the trench (4), a second doped region (12) at a distance from the first doped region (11), a third doped region (13) contiguous to the first doped region (11), the third doped region (13) arranged between the first doped region (11) and the second doped region (12), the second doped region (12) and the third doped region (13) having a first type of conductivity, and the first doped region (11) having a second type of conductivity which is opposite to the first type of conductivity,characterized in that
the trench (4) and the first doped region (11) extend through the substrate (1) from the main surface (2) to the rear outer surface (3) and the substrate (1) is of the first type of conductivity between the first doped region (11) and the second doped region (12).