| 发明名称 | Thin film transistor with oxide semiconductor having a portion with increased reflectance | ||
| 摘要 | An oxide thin film transistor (TFT) includes an oxide semiconductor layer including a first semiconductor layer and a second semiconductor layer on the first semiconductor layer; a gate insulating layer on the oxide semiconductor layer; a gate electrode on the gate insulating layer; an interlayer insulating layer on the gate electrode; and a source electrode and a drain electrode on the interlayer insulating layer and contacting the oxide semiconductor layer, wherein a first reflectance of the first semiconductor layer is greater than a second semiconductor layer. | ||
| 申请公布号 | US9293603(B2) | 申请公布日期 | 2016.03.22 |
| 申请号 | US201414526832 | 申请日期 | 2014.10.29 |
| 申请人 | LG Display Co., Ltd. | 发明人 | Yang Hee-Jung;Ho Won-Joon;Kim A-Ra |
| 分类号 | H01L29/786;H01L27/12 | 主分类号 | H01L29/786 |
| 代理机构 | Morgan, Lewis & Bockius LLP | 代理人 | Morgan, Lewis & Bockius LLP |
| 主权项 | 1. An oxide thin film transistor (TFT), comprising: an oxide semiconductor layer including a first semiconductor layer and a second semiconductor layer stacked on the first semiconductor layer; a gate insulating layer on the oxide semiconductor layer; a gate electrode on the gate insulating layer; an interlayer insulating layer on the gate electrode; and a source electrode and a drain electrode on the interlayer insulating layer and contacting the oxide semiconductor layer, wherein a reflectance of the first semiconductor layer is greater than the second semiconductor layer. | ||
| 地址 | Seoul KR | ||