发明名称 |
SYSTEMS AND METHODS FOR REDUCING BACKSIDE DEPOSITION AND MITIGATING THICKNESS CHANGES AT SUBSTRATE EDGES |
摘要 |
A substrate processing system for depositing a film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during the deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film. |
申请公布号 |
KR20160031419(A) |
申请公布日期 |
2016.03.22 |
申请号 |
KR20150126922 |
申请日期 |
2015.09.08 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
VARADARAJAN SESHA;SWAMINATHAN SHANKAR;SANGPLUNG SAANGRUT;PASQUALE FRANK;MINSHALL TED;LAVOIE ADRIEN;SABRI MOHAMED;BARNETT CODY |
分类号 |
H01L21/02;H01L21/205;H01L21/683;H01L21/687;H05H1/46 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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