发明名称 MAGNETIC RESISTANCE ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a magnetic resistance element capable of suppressing reduction in feeling while improving heat resistance.SOLUTION: Disclosed is a magnetic resistance element in which a pin layer 20, an intermediate layer 30 and a free layer 40 are laminated in this order and which has a magnetization direction in the free layer 40 in a normal direction with respect to an in-plane direction of a film surface. In the free layer 40, when the magnitude of the magnetic moment per a unit area is the magnetization amount, a non-magnetic material 41 in which the drop rate of the magnetization amount becomes larger than that of an anisotropic magnetic field is added to a base material constituting the free layer 40.SELECTED DRAWING: Figure 1
申请公布号 JP2016039313(A) 申请公布日期 2016.03.22
申请号 JP20140162820 申请日期 2014.08.08
申请人 DENSO CORP;TOHOKU UNIV 发明人 YANO SATOSHI;QING JIAN YI;ANDO YASUO;OKANE MIKIHIKO;NAKANO TAKAFUMI
分类号 H01L43/08;G01R33/09;H01F10/16;H01F10/32;H01L43/10 主分类号 H01L43/08
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