| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiC semiconductor device which inhibits film peeling of a Cu electrode and has a high diffusion prevention effect of Cu on an element structure part; and provide a manufacturing method of the SiC semiconductor device.SOLUTION: A silicon carbide semiconductor device manufacturing method of the present embodiment comprises: (a) a process of forming a barrier metal 13 on a silicon carbide semiconductor element; (b) a process of forming on the barrier metal 13, a Cu electrode 12 in which an end of a contact surface with the barrier metal 13 is retracted behind an end of the barrier metal 13; and (c) a process of performing anisotropic etching on the barrier metal 13 in a vertical direction by using a Cu electrode 12 as a mask. The process (b) is a process of forming the Cu electrode 12 in a manner such that a width of at least a part other than a bottom which contacts the barrier metal 13 becomes wider than a width of the bottom. |
