| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element which inhibits deep emission and improves monochromaticity and achieves high luminous efficiency.SOLUTION: A nitride semiconductor light emitting element of the present embodiment has an active layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. The n-type nitride semiconductor layer contains AlInGaN(0<X1≤1, 0≤X2<1, 0≤X3<1, X1+X2+X3=1) and each of a C concentration and an O concentration is equal to or less than 1×10/cm.SELECTED DRAWING: Figure 3 |
