发明名称 半導体装置
摘要 A first overcurrent detection unit detects whether a drain-source voltage of an output transistor is greater than or equal to a first reference value and outputs a first detection signal. A second overcurrent detection unit detects whether an output current passing through the output transistor is greater than or equal to a second reference value and outputs a second detection signal. When receiving the first detection signal indicating that the drain-source voltage is greater than or equal to the first reference value, a latch circuit latches the second detection signal; when receiving the first detection signal indicating that the drain-source voltage is smaller than the first reference value, the latch circuit outputs the second detection signal without latching it. Based on the output of the latch circuit, the drive circuit controls the output transistor to either turn it off or turn it on and off alternately.
申请公布号 JP5889723(B2) 申请公布日期 2016.03.22
申请号 JP20120130081 申请日期 2012.06.07
申请人 ルネサスエレクトロニクス株式会社 发明人 相馬 治
分类号 H03K17/08;H02M1/00;H02M1/08 主分类号 H03K17/08
代理机构 代理人
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