| 摘要 |
PROBLEM TO BE SOLVED: To provide a fine uneven structure with high accuracy by one lithography process.SOLUTION: A hard mask material is formed on a substrate (S12), and a resist pattern is formed on the hard mask material by a lithography process (S14). The hard mask material is etched with the resist pattern as a mask (S16). An opening region (a non-mask region) of the hard mask material is subjected to isotropic etching, and an undercut is formed on a lower part of the hard mask material (S20). Then, an etching step and a deposition step are alternately repeated, and the non-mask region and the mask region masked with the hard mask material of the substrate are subjected to first anisotropic etching having a selective etching property in a thickness direction of the substrate (S22). After all of the hard mask material is removed from the substrate (S24), second anisotropic etching which alternately repeats the etching step and the deposition step is carried out by utilizing a protection film as a mask (S26). |
