发明名称 |
Light emitter with a conductive transparent p-type layer structure |
摘要 |
A light emitting device includes an n-type layer, a p-type layer structure, a layer of p-type nano-dots imbedded in the p-type layer structure, and an active region sandwiched between the n-type layer and the p-type layer structure, where the p-type nano-dots possess a sheet density of 1010 to 1012 cm−2, a lateral dimension of 2-20 nm, and a vertical dimension of 1-5 nm. The p-type layer structure with a layer of p-type nano-dots imbedded therein provides good vertical conductivity and UV transparency. Also provided is a method for making the light emitting device. |
申请公布号 |
US9293648(B1) |
申请公布日期 |
2016.03.22 |
申请号 |
US201514687886 |
申请日期 |
2015.04.15 |
申请人 |
BOLB INC. |
发明人 |
Zhang Jianping;Wang Hongmei |
分类号 |
H01L33/06;H01L33/00;H01L33/22;H01L33/36;H01L33/32;H01L33/14 |
主分类号 |
H01L33/06 |
代理机构 |
J.C. Patents |
代理人 |
J.C. Patents |
主权项 |
1. A light emitting device comprising:
an n-type layer; a p-type layer structure; a layer of p-type nano-dots imbedded in the p-type layer structure, and an active region sandwiched between the n-type layer and the p-type layer structure. |
地址 |
San Jose CA US |