Metal nanoparticle monolayer

摘要

This disclosure generally relates to a device with a monolayer of metal nanoparticles and a method for making the same. The nanoparticles of the monolayer of metal nanoparticles are grouped in an ultrahigh density with an average distance between each neighboring metal nanoparticle less than or equal to about 3 nanometers. The monolayer can be self-assembled on a substrate to facilitate controllable voltage shifts within the device.

主权项

1. A device, comprising:
a first charge trapping layer that stores an electric charge associated with a voltage applied to the first charge trapping layer comprising a monolayer array of metal nanoparticles, wherein the monolayer array of metal nanoparticles is self assembled with an ultra high density, wherein metal nanoparticles of the monolayer array of metal nanoparticles comprise a diameter greater than 10 nm, and wherein an average distance between any two of the metal nanoparticles is less than or equal to about 3 nanometers; a substrate layer at least partially coated with the first charge trapping layer, wherein the first charge trapping layer and the substrate layer are configured to change a magnitude of the voltage applied to the device based on an increase or a decrease of the diameter of metal nanoparticles of the monolayer array of metal nanoparticles or an increase or decrease of the average distance between any two of the metal nanoparticles; a second charge trapping layer comprising a two-dimensional reduced graphene oxide sheet comprising a thickness of at most 1 nm that partially covers the first charge trapping layer, wherein an energy barrier between the first charge trapping layer and the second charge trapping layer inhibits leakage of the electric charge from within the device; and a control component that enables a tuning of a voltage shift threshold between the first charge trapping layer and the substrate layer based on an increase in the diameter of the metal nanoparticles, wherein the tuning enables the device to comprise a first capability to perform greater than 800 cycles of a programming and erasing operation, and a second capability to retain a set of data for greater than 105 seconds.