| 摘要 |
PROBLEM TO BE SOLVED: To definitely achieve a high-performance and low-power consumption LSI by low voltage drive of a multigate MOS transistor and further improvement of a switching speed.SOLUTION: In a field effect semiconductor element having a three-dimensional multigate which is composed of a top face and two lateral faces, the top face is formed as a (551) plane and at least one of the lateral faces is formed as a (100) plane or substantially a (100) plane.SELECTED DRAWING: Figure 2 |
