| 发明名称 | Semiconductor package having a baseplate with a die attach region and a peripheral region | ||
| 摘要 | A semiconductor package includes a baseplate having a die attach region and a peripheral region, a transistor die having a first terminal and a second terminal facing away from the baseplate, and a frame including an electrically insulative member having a first side attached to the peripheral region of the baseplate, a second side facing away from the baseplate, a first metallization at the first side of the insulative member and a second metallization at the second side of the insulative member. The insulative member extends outward beyond a lateral sidewall of the baseplate. The first metallization is attached to the part of the first side which extends outward beyond the lateral sidewall of the baseplate. The first and second metallizations are electrically connected at a region of the insulative member spaced apart from the lateral sidewall of the baseplate. | ||
| 申请公布号 | US9293407(B2) | 申请公布日期 | 2016.03.22 |
| 申请号 | US201414531186 | 申请日期 | 2014.11.03 |
| 申请人 | Infineon Technologies AG | 发明人 | Komposch Alexander;Chew Soon Ing;Condie Brian |
| 分类号 | H01L23/34;H01L21/00;H01L23/498;H01L23/522;H01L23/047;H01L23/10;H01L23/13;H01L21/768;H01L23/48;H01L23/06;H01L23/14;H01L25/065;H01L23/00 | 主分类号 | H01L23/34 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A semiconductor package, comprising: a baseplate having a die attach region and a peripheral region; a transistor die having a first terminal and a second terminal facing away from the baseplate; and a frame comprising an electrically insulative member having a first side attached to the peripheral region of the baseplate, a second side facing away from the baseplate, a first metallization at the first side of the insulative member and a second metallization at the second side of the insulative member, wherein the insulative member extends outward beyond a lateral sidewall of the baseplate, the first metallization is attached to the part of the first side which extends outward beyond the lateral sidewall of the baseplate, and the first and second metallizations are electrically connected at a region of the insulative member spaced apart from the lateral sidewall of the baseplate. | ||
| 地址 | Neubiberg DE | ||