Semiconductor device and method of forming holes in substrate to interconnect top shield and ground shield

摘要

A semiconductor device includes a multi-layer substrate. A ground shield is disposed between layers of the substrate and electrically connected to a ground point. A plurality of semiconductor die is mounted to the substrate over the ground shield. The ground shield extends beyond a footprint of the plurality of semiconductor die. An encapsulant is formed over the plurality of semiconductor die and substrate. Dicing channels are formed in the encapsulant, between the plurality of semiconductor die, and over the ground shield. A plurality of metal-filled holes is formed along the dicing channels, and extends into the substrate and through the ground shield. A top shield is formed over the plurality of semiconductor die and electrically and mechanically connects to the ground shield through the metal-filled holes. The top and ground shields are configured to block electromagnetic interference generated with respect to an integrated passive device disposed in the semiconductor die.

主权项

1. A method of making a semiconductor device, comprising:
providing a substrate including a first shielding layer disposed within the substrate; disposing a semiconductor die over the first shielding layer; forming an opening into the substrate over the first shielding layer with the first shielding layer extending from under the semiconductor die to the opening; and forming a second shielding layer over the semiconductor die and extending into the opening to the first shielding layer.