发明名称 Light absorbing layer for photoelectrode structure, photoelectrode structure including the same, and photoelectrochemical cell including the photoelectrode structure
摘要 A light absorbing layer for a photoelectrode structure, the light absorbing layer including copper oxide, wherein metallic copper (Cu) is present at a grain boundary of the copper oxide. Also, a photoelectrode structure including the light absorbing layer, a photoelectrochemical cell including the photoelectrode structure, and a solar cell including the light absorbing layer.
申请公布号 US9290852(B2) 申请公布日期 2016.03.22
申请号 US201314076355 申请日期 2013.11.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Lee Jeong-hee;Kim Tae-gon;Kim Tae-hyung;Im Seoung-jae
分类号 C25B11/00;C25B11/04;C25B1/00;H01L31/0224 主分类号 C25B11/00
代理机构 Cantor Colburn LLP 代理人 Cantor Colburn LLP
主权项 1. A photoelectrode structure comprising: an electrode; a light absorbing layer comprising copper oxide, wherein metallic copper (Cu) is present in the form of particles and wherein the particles of the metallic copper are within a grain boundary of the copper oxide; a protective layer; and an electrocatalyst.
地址 KR