发明名称 |
Light absorbing layer for photoelectrode structure, photoelectrode structure including the same, and photoelectrochemical cell including the photoelectrode structure |
摘要 |
A light absorbing layer for a photoelectrode structure, the light absorbing layer including copper oxide, wherein metallic copper (Cu) is present at a grain boundary of the copper oxide. Also, a photoelectrode structure including the light absorbing layer, a photoelectrochemical cell including the photoelectrode structure, and a solar cell including the light absorbing layer. |
申请公布号 |
US9290852(B2) |
申请公布日期 |
2016.03.22 |
申请号 |
US201314076355 |
申请日期 |
2013.11.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Lee Jeong-hee;Kim Tae-gon;Kim Tae-hyung;Im Seoung-jae |
分类号 |
C25B11/00;C25B11/04;C25B1/00;H01L31/0224 |
主分类号 |
C25B11/00 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP |
主权项 |
1. A photoelectrode structure comprising:
an electrode; a light absorbing layer comprising copper oxide, wherein metallic copper (Cu) is present in the form of particles and wherein the particles of the metallic copper are within a grain boundary of the copper oxide; a protective layer; and an electrocatalyst. |
地址 |
KR |