| 摘要 |
The method involves forming a weakened buried layer under a free face of donor substrate by ionic implantation. The substrate is set in intimate contact with carrier substrate. Fracture along the layer is formed to release a thin layer of residue of donor substrate by exposing free faces of the thin layer and the residue. Treatment is applied to exposed face of the residue for a new cycle. The face is set in the presence of a bath (6), where ultrasounds (US) are applied to the bath at a frequency ranging between 10 and 80 kilohertz under conditions to cause cavitation along the face. The donor substrate is made of silicon. The bath contains fluid i.e. mixture of water and acetone. The method causes the fracture along the weakened buried layer according to a Smart Cut(RTM: advanced, very strong and highly wear-resistant, super-material cutting head system) technology. |
