Semiconductor device and manufacturing method thereof

摘要

Provided is an in-wiring-layer active element (component) which allows for electrical isolation between a gate electrode and a channel in a top gate structure. A semiconductor device includes a first wiring layer, a second wiring layer, and a semiconductor element. The first wiring layer has a first interlayer insulating layer, and a first wire embedded in the first interlayer insulating layer. The second wiring layer has a second interlayer insulating layer, and second wires embedded in the second interlayer insulating layer. The semiconductor element is provided at least in the second wiring layer. The semiconductor element includes a semiconductor layer provided in the second wiring layer, a gate insulating film provided in contact with the semiconductor layer, a gate electrode provided on the opposite side of the semiconductor layer via the first gate insulating film, and a first side wall film provided over a side surface of the semiconductor layer.

主权项

1. A semiconductor device, comprising:
a first wiring layer having a first interlayer insulating layer and a first wire embedded in the first interlayer insulating layer; a second wiring layer having a second interlayer insulating layer formed above the first wiring layer and a second wire embedded in the second interlayer insulating layer; and a semiconductor element provided at least in the second wiring layer, wherein the semiconductor element includes
an island-shaped semiconductor layer provided in the second wiring layer;a first gate insulating film provided in contact with the semiconductor layer;a first gate electrode provided on the opposite side of the semiconductor layer via the first gate insulating film and extending over and laterally across a plurality of ends of the semiconductor layer; andfirst and second side wall films provided over respective side surfaces of the semiconductor layer and each of said first and second side wall films having a topmost surface which extends higher than a top layer surface of said island-shaped semiconductor layer to prevent said first gate electrode from contacting said side surfaces of the semiconductor layer at said plurality of ends, wherein the semiconductor element further includes a second gate insulating film provided in contact with the semiconductor layer on the opposite side of the first gate insulating film with respect to the semiconductor layer; and a second gate electrode provided in contact with the second gate insulating film on the opposite side of the first gate electrode with respect to the semiconductor layer, wherein the semiconductor element further includes a first insulating film provided so as to come in contact with either one of the first gate insulating film and the second gate insulating film, wherein the first or second gate insulating film in contact with the first insulating film, or the first insulating film has a charge retaining function, wherein the gate electrode closer to the insulating film having the charge retaining function is a control electrode, and wherein the control electrode is embedded in the first wiring layer.