Crystallization processing for semiconductor applications

摘要

A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material.

主权项

1. A method of treating a substrate, comprising:
identifying a first treatment zone; forming a molten area of the first treatment zone by exposing a surface of the first treatment zone to a first laser pulse, wherein the first laser pulse has a non-uniformity of less than about 5 percent; recrystallizing the molten area of the first treatment zone while exposing the first treatment zone to a first plurality of laser pulses; identifying a second treatment zone; forming a molten area of the second treatment zone by exposing a surface of the second treatment zone to a second laser pulse, wherein the second laser pulse has a non-uniformity of less than about 5 percent; and recrystallizing the molten area of the second treatment zone while exposing the second treatment zone to a second plurality of laser pulses.