Diode having trenches in a semiconductor region

摘要

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

主权项

1. A diode, comprising:
a semiconductor region having trenches formed therein; a conductive electrode forming an anode of the diode, the conductive electrode including conductive regions formed in the trenches of the semiconductor region; and a cathode, wherein the conductive electrode contacts the semiconductor region inside the trenches, outside the trenches, or both, wherein the semiconductor region includes a III-N semiconductor material, and wherein the semiconductor region is a first semiconductor region, the III-N semiconductor material is a first III-N semiconductor material, and the diode further comprises a second semiconductor region including a second III-N semiconductor material different from the first semiconductor material, wherein the first semiconductor region is between the second semiconductor region and the conductive electrode.