| 发明名称 | Semiconductor device and manufacturing method of the same | ||
| 摘要 | Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers. | ||
| 申请公布号 | US9293411(B2) | 申请公布日期 | 2016.03.22 |
| 申请号 | US201414494134 | 申请日期 | 2014.09.23 |
| 申请人 | SONY CORPORATION | 发明人 | Fukasawa Masanaga |
| 分类号 | H01L23/28;H01L23/522;H01L23/48;H01L25/065;H01L21/768;H01L25/00;H01L23/528 | 主分类号 | H01L23/28 |
| 代理机构 | Sheridan Ross P.C. | 代理人 | Sheridan Ross P.C. |
| 主权项 | 1. A semiconductor device, comprising: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer, wherein the substrate is a bonded substrate having a substrate including the first conductive layer and a substrate including the second conductive layer bonded together; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in at least part of the bottom of the large-diameter concave portion, wherein the bottom of the large-diameter concave portion is co-planar with the top of the first conductive layer; a small-diameter concave portion extended from the large-diameter concave portion with the second conductive layer exposed at the bottom of the small-diameter concave portion; a conductive member provided in a connection hole made up of the large and small-diameter concave portions to connect the first and second conductive layers; and an interlayer insulating film exposed to the conductive member, the bottom of the large-diameter concave portion, and the top of the small-diameter concave portion. | ||
| 地址 | Tokyo JP | ||