METHOD FOR MANUFACTURING OF A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device comprises the following steps: forming active pins which are separated from one another in a first direction, protrude from a surface thereof, and are extended in the first direction, by etching a substrate; forming a device separation film pattern which partially fills a gap between the active pins on the substrate; forming a mold pattern including a first aperture part which exposes a part where the active pins are separated from one another, on the device separation film pattern; forming an insulation pattern filling the inside of the first aperture part; removing the mold pattern in order for the surface of the active pins to be exposed; and forming a gate structure extended in a second direction vertical to the first direction and a dummy gate structure extended in the second direction on the insulation pattern on each of the active pins. By the method for manufacturing the semiconductor device, a pin type transistor with excellent characteristics can be manufactured.