| 摘要 |
The present invention is a single crystal production method characterized by the steps of: measuring, in a state where an oven internal structure is installed on the pull chamber above the melt surface, the distance, from a reference height position at a predetermined height above the melt surface, to the lower extremity portion of the oven internal structure; determining a lower extremity portion position error, which is the difference between this measured distance and a preset distance from the reference height position to the lower extremity portion of the oven internal structure; adding this lower extremity portion position error to the distance from the reference height position to the melt surface position, thereby determining a target distance from the melt surface to the reference height position; and causing the distance from the initial position of the melt surface to the reference height position to reach the target distance, thereby adjusting the spacing so that the predetermined distance is reached. In this manner, the bath surface spacing can be adjusted to the predetermined distance, without having to provide locally inside the oven a position that needs to be precise, and even if a component of the oven internal structure has been replaced. |
