| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a photomask blank, in which a resist film is formed after an inorganic film containing silicon is subjected to a silylation treatment and generation of defects due to a resist residue or the like after development can be suppressed.SOLUTION: The method for manufacturing a photomask blank aims to manufacture a photomask blank having at least an inorganic film 5 containing silicon on a transparent substrate 2 and having a resist film 6 on the inorganic film 5. After the inorganic film 5 is formed, the film is heat treated in an atmosphere containing oxygen at a temperature higher than 200°C and then subjected to a silylation treatment; and then the resist film is formed by application. By the method, generation of defects due to a resist residue or the like can be suppressed.SELECTED DRAWING: Figure 2 |
