| 发明名称 |
POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
The present disclosure describes a power electronics module comprising a lead frame in which a chip of a first semiconductor device is embedded, a first PCB mounted on top of the lead frame and the chip of the first semiconductor device, and a support frame mounted on top of the PCB, the support frame comprising a cavity in which the chip of a second semiconductor device is embedded, wherein the chips of the first semiconductor device and the second semiconductor device are positioned on top of each other, and the first PCB comprises a first electrically conducting path between the chips of the first semiconductor device and the second semiconductor device. |
| 申请公布号 |
US2016079156(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514827884 |
申请日期 |
2015.08.17 |
| 申请人 |
ABB Technology Oy |
发明人 |
Liu Chunlei;Cottet Didier;Brem Franziska;Kicin Slavo |
| 分类号 |
H01L23/498;H01L25/07;H01L21/48;H01L23/367;H01L25/00;H01L23/495;H01L25/18 |
主分类号 |
H01L23/498 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power electronics module comprising a first semiconductor device and a second semiconductor device, wherein the module is configured to operate such that, in response to a control signal, a current flowing through one of the semiconductor devices commutates to flow through the other semiconductor device, wherein the power electronics module further comprises
a lead frame in which a chip of the first semiconductor device is embedded, a first PCB mounted on top of the lead frame and the chip of the first semiconductor device, and a support frame mounted on top of the PCB, wherein the chip of the second semiconductor device is embedded in the support frame, and wherein the chips of the first semiconductor device and the second semiconductor device are positioned on top of each other,
the first PCB comprises a first electrically conducting path between the chips of the first semiconductor device and the second semiconductor device. |
| 地址 |
Helsinki FI |
