SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

This semiconductor device is provided with: a low-concentration N-type SiC layer (2) that is formed on the front surface side of an N-type SiC substrate (1); a P-type region (3) that is selectively formed in a surface layer of the SiC layer; an N-type source region (4) and a high-concentration P-type contact region (5), which are formed in the P-type region (3); a gate insulating film (6) that is formed on a region extending to the N-type SiC layer (2) from the N-type source region (4) via the P-type region (3); a gate electrode (7) that is formed on the gate insulating film (6); an insulating film (8) covering the gate electrode (7); a source electrode (11) electrically connected to the surface of the P-type contact region (5) and the surface of the N-type source region (4); and a drain electrode (12) that is formed on the rear surface side of the N-type SiC substrate (1). On a first barrier film (10) covering the insulating film (8), and on a second barrier film (31) that is provided on a gate contact hole section, metal electrodes (11, 23) are formed, respectively. Consequently, the gate contact can be excellently formed.