| 发明名称 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT |
| 摘要 |
According to one embodiment, a semiconductor light emitting element includes a semiconductor layer, a first conductive layer, and a second conductive layer. The second conductive layer is provided between the semiconductor layer and the first conductive layer. A light transmittance of the second conductive layer is higher than a light transmittance of the first conductive layer. An extinction coefficient of the second conductive layer is 0.005 or less. |
| 申请公布号 |
US2016079502(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514642477 |
申请日期 |
2015.03.09 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Mitsugi Satoshi;Ito Toshihide |
| 分类号 |
H01L33/62;H01L33/22;H01L33/32;H01L33/00;H01L33/06 |
主分类号 |
H01L33/62 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor light emitting element, comprising:
a semiconductor layer; a first conductive layer; and a second conductive layer provided between the semiconductor layer and the first conductive layer, a light transmittance of the second conductive layer being higher than a light transmittance of the first conductive layer, an extinction coefficient of the second conductive layer being 0.005 or less. |
| 地址 |
Tokyo JP |
