| 发明名称 |
MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING MAGNETIC MEMORY DEVICE |
| 摘要 |
According to one embodiment, a method of manufacturing a magnetic memory device includes a stack structure formed of a plurality of layers including a magnetic layer, the method includes forming a lower structure film including at least one layer, etching the lower structure film to form a lower structure of the stack structure, forming an upper structure film including at least one layer on a region including the lower structure, and etching the upper structure film to form an upper structure of the stack structure on the lower structure. |
| 申请公布号 |
US2016079519(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514639675 |
申请日期 |
2015.03.05 |
| 申请人 |
YOSHIKAWA Masatoshi;SETO Satoshi;TSUBATA Shuichi;TOMIOKA Kazuhiro |
发明人 |
YOSHIKAWA Masatoshi;SETO Satoshi;TSUBATA Shuichi;TOMIOKA Kazuhiro |
| 分类号 |
H01L43/08;H01L27/22;H01L43/12 |
主分类号 |
H01L43/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a magnetic memory device comprising a stack structure formed of a plurality of layers including a magnetic layer, the method comprising:
forming a lower structure film including at least one layer; etching the lower structure film to form a lower structure of the stack structure; forming an upper structure film including at least one layer on a region including the lower structure; and etching the upper structure film to form an upper structure of the stack structure on the lower structure. |
| 地址 |
Seoul KR |
