发明名称 |
ELECTROSTATIC CHUCK MECHANISM, SUBSTRATE PROCESSING METHOD AND SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS |
摘要 |
An electrostatic chuck mechanism that adsorbs a semiconductor substrate includes a stage of a flat plate shape, an electrode provided in the stage, and generating an electrostatic force, a gas supply section provided in the stage, supplying gas to an upper surface of the stage, and performing temperature adjustment of a lower surface of the semiconductor substrate, a temperature adjustment section performing temperature adjustment of the gas at the time of adsorbing the semiconductor substrate, and, a substrate vertically moving mechanism provided in the stage, and vertically moving the semiconductor substrate. |
申请公布号 |
US2016079108(A1) |
申请公布日期 |
2016.03.17 |
申请号 |
US201514842209 |
申请日期 |
2015.09.01 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOBAYASHI Hiroaki |
分类号 |
H01L21/683;H01L21/02;H01L21/677 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
1. An electrostatic chuck mechanism that adsorbs a semiconductor substrate, comprising:
a stage of a flat plate shape; an electrode provided in the stage, and generating an electrostatic force, a gas supply section provided in the stage, supplying gas to an upper surface of the stage, and performing temperature adjustment of a lower surface of the semiconductor substrate; a temperature adjustment section performing temperature adjustment of the gas at the time of adsorbing the semiconductor substrate; and a substrate vertically moving mechanism provided in the stage, and vertically moving the semiconductor substrate. |
地址 |
Minato-ku JP |