发明名称 ELECTROSTATIC CHUCK MECHANISM, SUBSTRATE PROCESSING METHOD AND SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS
摘要 An electrostatic chuck mechanism that adsorbs a semiconductor substrate includes a stage of a flat plate shape, an electrode provided in the stage, and generating an electrostatic force, a gas supply section provided in the stage, supplying gas to an upper surface of the stage, and performing temperature adjustment of a lower surface of the semiconductor substrate, a temperature adjustment section performing temperature adjustment of the gas at the time of adsorbing the semiconductor substrate, and, a substrate vertically moving mechanism provided in the stage, and vertically moving the semiconductor substrate.
申请公布号 US2016079108(A1) 申请公布日期 2016.03.17
申请号 US201514842209 申请日期 2015.09.01
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KOBAYASHI Hiroaki
分类号 H01L21/683;H01L21/02;H01L21/677 主分类号 H01L21/683
代理机构 代理人
主权项 1. An electrostatic chuck mechanism that adsorbs a semiconductor substrate, comprising: a stage of a flat plate shape; an electrode provided in the stage, and generating an electrostatic force, a gas supply section provided in the stage, supplying gas to an upper surface of the stage, and performing temperature adjustment of a lower surface of the semiconductor substrate; a temperature adjustment section performing temperature adjustment of the gas at the time of adsorbing the semiconductor substrate; and a substrate vertically moving mechanism provided in the stage, and vertically moving the semiconductor substrate.
地址 Minato-ku JP