发明名称 PLASMA PROCESSING APPARATUS
摘要 A plasma processing apparatus can efficiently perform a pulse modulation method of switching a high frequency power to be used in a plasma process between a high level and a low level alternately according to a duty ratio of a modulation pulse. In this plasma processing apparatus, when performing a high/low pulse modulation on the high frequency power for plasma generation, if a weighted variable K is set to be 0.5<K<1, a constant reflection wave power PRH is generated on a high frequency transmission line of a plasma generation system even during a pulse-on period Ton. Meanwhile, during a pulse-off period Toff, a reflection wave power PRL decreases. By adjusting the value of K, a balance between the reflection wave power PRH during the pulse-on period Ton and the reflection wave power PRL during the pulse-off period Toff can be controlled.
申请公布号 US2016079037(A1) 申请公布日期 2016.03.17
申请号 US201514853140 申请日期 2015.09.14
申请人 Tokyo Electron Limited 发明人 Hirano Taichi;Yoshida Ken;Sasaki Hikoichiro;Yamada Satoshi;Hayakawa Yoshinobu;Ishibashi Junji;Kumagai Fumitoshi
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. A plasma processing apparatus of generating plasma by high frequency discharge of a processing gas within a decompression processing vessel that accommodates therein a processing target object, which is loaded into and unloaded from the processing vessel, and performing a process on the processing target object within the processing vessel with the plasma, the plasma processing apparatus comprising: a first high frequency power supply configured to output a first high frequency power; a first high frequency power modulation unit configured to pulse-modulate an output of the first high frequency power supply with a modulation pulse having a regular frequency such that the first high frequency power has a high level during a first period and has a low level lower than the high level during a second period, the first period and the second period being repeated alternately with a preset duty ratio; a first high frequency transmission line configured to transmit the first high frequency power outputted from the first high frequency power supply to a first electrode provided within or in the vicinity of the processing vessel; and a first matching device configured to measure a load impedance on the first high frequency transmission line with respect to the first high frequency power supply, and configured to match a weighted average measurement value, which is obtained by weighted-averaging a load impedance measurement value during the first period and a load impedance measurement value during the second period with a preset weighted value, with an output impedance of the first high frequency power supply.
地址 Tokyo JP