发明名称 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS
摘要 An organic light-emitting display apparatus is provided. The apparatus includes an organic light-emitting diode emitting visible light, a driving thin film transistor driving the organic light-emitting diode, and a compensation thin film transistor. The compensation thin film transistor includes a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode. The compensation gate electrode includes a first gate electrode, and a second gate electrode electrically connected to the first gate electrode. The compensation drain electrode is electrically connected to the driving gate electrode of the driving thin film transistor. The compensation semiconductor layer includes a first semiconductor region overlapping the first gate electrode and a second semiconductor region overlapping the second gate electrode and disposed further from the compensation drain electrode than the first semiconductor region, and an area of the first semiconductor region is less than that of the second semiconductor region.
申请公布号 US2016078809(A1) 申请公布日期 2016.03.17
申请号 US201514674707 申请日期 2015.03.31
申请人 Samsung Display Co., Ltd. 发明人 Yoon Juwon;Lee Iljeong;Lee Jiseon;Im Choongyoul
分类号 G09G3/32;H01L27/32 主分类号 G09G3/32
代理机构 代理人
主权项 1. An organic light-emitting display apparatus, comprising: an organic light-emitting diode emitting visible light; a driving thin film transistor driving the organic light-emitting diode and comprising a driving gate electrode, a driving semiconductor layer, a driving source electrode, and a driving drain electrode; and a compensation thin film transistor electrically connected to the driving thin film transistor and compensating for threshold voltage of the driving thin film transistor, the compensation thin film transistor comprising a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode, the compensation gate electrode comprising a first gate electrode and a second gate electrode electrically connected to each other, the compensation drain electrode electrically connected to the driving gate electrode of the driving thin film transistor, and the compensation semiconductor layer comprising a first semiconductor region overlapping the first gate electrode and a second semiconductor region overlapping the second gate electrode and disposed further from the compensation drain electrode than the first semiconductor region, and an area of the first semiconductor region being less than that of the second semiconductor region.
地址 Yongin-City KR