| 主权项 |
1. A nonvolatile semiconductor memory device, comprising:
a stacked body provided on a foundation layer, the stacked body including electrode layers stacked alternately with first insulating layers; first semiconductor members extending in a stacking direction of the stacked body, the first semiconductor members being provided in the stacked body; a second semiconductor member provided under the first semiconductor members, the second semiconductor member including first portions extending in the stacking direction and a second portion extending in a direction crossing the stacking direction, the first portions and the second portion being provided in the stacked body, the second semiconductor member being connected commonly to lower ends of the first semiconductor members; a memory film provided between a first electrode layer of the electrode layers and one of the first semiconductor members; and an insulating film provided between the second semiconductor member and the stacked body, a second electrode layer of the electrode layers being provided on an upper surface of the second portion of the second semiconductor member via the insulating film, a third electrode layer of the electrode layers being provided under a lower surface of the second portion of the second semiconductor member via the insulating film. |
