| 摘要 |
This semiconductor device is provided with: a first metal layer including a gate electrode; a first insulating layer that is provided on the first metal layer; an oxide semiconductor layer that is provided on the first insulating layer; a second insulating layer that is provided on the oxide semiconductor layer; a second metal layer, which is provided on the oxide semiconductor layer and the second insulating layer, and which includes a source electrode; a third insulating layer that is provided on the second metal layer; and a first transparent electrode layer that is provided on the third insulating layer. The oxide semiconductor layer has: a first portion overlapping the gate electrode; and a second portion extending to traverse, from the first portion, a gate electrode edge on the drain electrode side. The third insulating layer does not include an organic insulating layer, and a first contact hole is formed in the second insulating layer and the third insulating layer, said first contact hole overlapping the second portion of the oxide semiconductor layer when viewed from the normal line direction of the substrate. The first transparent electrode layer includes a transparent conductive layer that is in contact with, in the first contact hole, the second portion of the oxide semiconductor layer. |
