NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

This nonvolatile semiconductor memory device includes a semiconductor substrate and a first semiconductor layer formed on a surface of the semiconductor substrate. A memory cell array is formed by coupling a plurality of memory cells in series, and includes a memory string formed to extend in a first direction vertical to the surface of the semiconductor substrate. A contact extends in a direction vertical to the semiconductor substrate, and has one end coupled to the first semiconductor layer. The contact includes: a second semiconductor layer that is formed in the first semiconductor layer and has a higher impurity concentration than that of the first semiconductor layer; a silicide film that has one end coupled to the second semiconductor layer and extends in the first direction; and a metal film formed on an inner wall of the silicide film.

主权项

1. A nonvolatile semiconductor memory device, comprising:
a semiconductor substrate; a first semiconductor layer formed on a surface of the semiconductor substrate; a memory cell array that includes a memory string formed to extend in a first direction vertical to the surface of the semiconductor substrate, the memory string being formed by coupling a plurality of memory cells in series; a contact that extends in the first direction, the contact having one end coupled to the first semiconductor layer, wherein the contact includes:
a second semiconductor layer formed in the first semiconductor layer, the second semiconductor layer having a higher impurity concentration than an impurity concentration of the first semiconductor layer;a silicide film that has one end coupled to the second semiconductor layer, the silicide film extending in the first direction; anda metal film formed on an inner wall of the silicide film.