发明名称 |
SUBSTRATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A substrate structure is provided, including: a carrier having at least a wiring area defined and positioned on a portion of a surface of the carrier; a first insulating layer formed on the wiring area; a wiring layer formed on the first insulating layer formed on the wiring area; and a second insulating layer formed on the wiring area. Therefore, a contact surface between the carrier and the first and second insulating layers is reduced by reducing the areas of the first and second insulating layers, whereby a substrate warpage due to mismatch of coefficients of thermal expansion (CTE) is avoided. The present invention further provides a method of manufacturing the substrate structure as described above. |
申请公布号 |
US2016079148(A1) |
申请公布日期 |
2016.03.17 |
申请号 |
US201514667795 |
申请日期 |
2015.03.25 |
申请人 |
Siliconware Precision Industries Co., Ltd. |
发明人 |
Chang Cheng-An;Sun Sung-Huan;Wu Chien-Hung;Chen Yi-Cheih;Liao Wen-Kai |
分类号 |
H01L23/498;H01L21/48 |
主分类号 |
H01L23/498 |
代理机构 |
|
代理人 |
|
主权项 |
1. A substrate structure, comprising;
a carrier having at least a wiring area defined and positioned on a portion of a surface of the carrier; a first insulating layer formed on the at least a wiring area; a wiring layer formed on the first insulating layer; and a second insulating layer formed on the carrier. |
地址 |
Taichung TW |