发明名称 SUBSTRATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
摘要 A substrate structure is provided, including: a carrier having at least a wiring area defined and positioned on a portion of a surface of the carrier; a first insulating layer formed on the wiring area; a wiring layer formed on the first insulating layer formed on the wiring area; and a second insulating layer formed on the wiring area. Therefore, a contact surface between the carrier and the first and second insulating layers is reduced by reducing the areas of the first and second insulating layers, whereby a substrate warpage due to mismatch of coefficients of thermal expansion (CTE) is avoided. The present invention further provides a method of manufacturing the substrate structure as described above.
申请公布号 US2016079148(A1) 申请公布日期 2016.03.17
申请号 US201514667795 申请日期 2015.03.25
申请人 Siliconware Precision Industries Co., Ltd. 发明人 Chang Cheng-An;Sun Sung-Huan;Wu Chien-Hung;Chen Yi-Cheih;Liao Wen-Kai
分类号 H01L23/498;H01L21/48 主分类号 H01L23/498
代理机构 代理人
主权项 1. A substrate structure, comprising; a carrier having at least a wiring area defined and positioned on a portion of a surface of the carrier; a first insulating layer formed on the at least a wiring area; a wiring layer formed on the first insulating layer; and a second insulating layer formed on the carrier.
地址 Taichung TW