| 摘要 |
<p>PURPOSE:To prevent side etching when manufacturing an electrode, by providing a thin electrode metal layer of area to cover an opening of an insulating film, alloying the metal layer, shaping an electrode metal, and etching a polycrystalline silicon layer with a mask as the alloyed layer. CONSTITUTION:A p-layer 11 is provided on an n-type Si substrate 10. An opening is provided in an SiO2 film 14 and covered with a polycrystalline silicon film 15. Diffusion is effected through the film 15 to selectively produce n<+>-layers 12, 13. Aluminum 17 is then evaporated. The aluminum film 17 is etched to make an electrode pattern. Since the film 17 is thin, side etching does not take place. Heat treatment is effected to cause the aluminum to react the polycrystalline silicon to produce an aluminum-silicon alloy 18. An aluminum electrode pattern 20 is then selectively made. At that time, the alloy layer 18 is does not undergo etching. The electrode layer 20 is used as a mask to etch the polycrystalline silicon layer 15 by plasma of Freon gas. At that time, the alloy layer 18 does not undergo etching although the electrode 20 does. The alloy layer 18 remains although the distant part of the polycrystalline silicon layer 15 is etched. Therefore, a diffused face is not exposed and etched through an electrode opening. This results in preventing the performance of a semiconductor device from falling.</p> |
