PLASMA PROCESSING APPARATUS

摘要

A plasma processing apparatus includes a stage in a processing chamber where plasma is formed, a wafer to be processed, and an electrode arranged at an upper part of the stage and supplied with power to electrostatically attract and hold the wafer on the stage, and consecutively processing a plurality of wafers one by one. There are plural processing steps of conducting processing using the plasma under different conditions and there are plural periods when formation of plasma is stopped between the processing steps. An inner wall of the processing chamber is coated before starting the processing of any wafer, and voltage supplied to the electrode is changed according to a balance of respective polarities of particles floating and charged in the processing chamber in each period when formation of plasma is stopped.

主权项

1. A plasma processing apparatus comprising:
a processing chamber arranged inside a vacuum chamber, plasma being formed in a pressure-reduced inner space of the processing chamber; a stage arranged in the processing chamber and having an upper surface, a wafer to be processed using the plasma being mounted on the upper surface; an electrode arranged at an upper part of the stage and supplied with power to electrostatically attract and hold the wafer on the upper surface of the stage; and a high-frequency power supply for supplying high-frequency power to the stage during processing using the plasma, and the plasma processing apparatus consecutively processing a plurality of wafers one by one, wherein there are a plurality of processing steps of conducting processing using the plasma under different conditions and there are a plurality of periods when formation of plasma is stopped between the processing steps, wherein a process of forming a coating on an inner wall of the processing chamber is conducted before starting the processing of any wafer, and voltage supplied to the electrode is changed according to a balance of respective polarities of particles floating and charged in the processing chamber in each period when formation of the plasma is stopped.