发明名称 |
SUPPORT SUBSTRATE, COMPOSITE SUBSTRATE, AND MANUFACTURING METHOD OF SEMICONDUCTOR WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide: a support substrate which has a high efficiency and is suitably used for manufacturing a semiconductor wafer; a composite substrate including such a support substrate and a semiconductor film; and a method for manufacturing a semiconductor wafer by use of such a support substrate and a composite substrate.SOLUTION: A support substrate 11 comprises aluminum atoms, silicon atoms, and 0.001-10 mass% of an alkali-earth metal element atoms, of which the crystal phases include 35-65 mass% of a mullite phase and 35-65 mass% of an alumina phase. A composite substrate 1 comprises: a support substrate 11 as described above; and a semiconductor film 13 located on the side of a principal face 11m of the support substrate 11.SELECTED DRAWING: Figure 2 |
申请公布号 |
JP2016036016(A) |
申请公布日期 |
2016.03.17 |
申请号 |
JP20150124546 |
申请日期 |
2015.06.22 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
SATO KAZUNARI;YAMAMOTO YOSHIYUKI;HASEGAWA MIKITO;TSUJI YUTAKA;FUJII AKITO |
分类号 |
H01L21/20;C30B25/18;C30B29/38;H01L21/02;H01L21/205 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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