发明名称 SUPPORT SUBSTRATE, COMPOSITE SUBSTRATE, AND MANUFACTURING METHOD OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide: a support substrate which has a high efficiency and is suitably used for manufacturing a semiconductor wafer; a composite substrate including such a support substrate and a semiconductor film; and a method for manufacturing a semiconductor wafer by use of such a support substrate and a composite substrate.SOLUTION: A support substrate 11 comprises aluminum atoms, silicon atoms, and 0.001-10 mass% of an alkali-earth metal element atoms, of which the crystal phases include 35-65 mass% of a mullite phase and 35-65 mass% of an alumina phase. A composite substrate 1 comprises: a support substrate 11 as described above; and a semiconductor film 13 located on the side of a principal face 11m of the support substrate 11.SELECTED DRAWING: Figure 2
申请公布号 JP2016036016(A) 申请公布日期 2016.03.17
申请号 JP20150124546 申请日期 2015.06.22
申请人 SUMITOMO ELECTRIC IND LTD 发明人 SATO KAZUNARI;YAMAMOTO YOSHIYUKI;HASEGAWA MIKITO;TSUJI YUTAKA;FUJII AKITO
分类号 H01L21/20;C30B25/18;C30B29/38;H01L21/02;H01L21/205 主分类号 H01L21/20
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