| 摘要 |
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, an n-side electrode, a p-side electrode, an insulating member, an n-side metal layer, and a p-side metal layer. The semiconductor layer includes a first layer, a second layer, and a light emitting layer. The n-side electrode is in contact with the first layer. The p-side electrode is in contact with the second layer. The insulating member is provided in an out-of-chip region located further outside than a side surface of the semiconductor layer. The insulating member includes a surface of a portion contiguous to the side surface of the semiconductor layer. The surface of the portion of the insulating member has reflectivity with respect to radiated light of the light emitting layer. The n-side metal layer is in contact with the n-side electrode, and integrally extends to the out-of-chip region from a contact portion between the n-side electrode and the n-side metal layer. The p-side metal layer is in contact with the p-side electrode, and integrally extends to the out-of-chip region from a contact portion between the p-side electrode and the p-side metal layer. |
