发明名称 PRODUCTION METHOD OF MONOCRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide production method of a monocrystal enabling the growth rate of the monocrystal to be increased.SOLUTION: A production method of a monocrystal 53 comprises: a step of arranging material powder 52 and a seed crystal 51 in a crucible 1; and a step of growing the single crystal 53 on the seed crystal 51 by sublimating and recrystallizing the material powder 52 on the seed crystal 51. The crucible 1 includes a peripheral wall portion 11, a bottom wall portion 12 and a cover portion 13. In the step of arranging the base powder 52 and the seed crystal 51, the material powder 52 is arranged so as to contact with the inner face 12A of the bottom wall portion 12, and the seed crystal 51 is arranged in such a way that it is held on the holding part 14 of the cover portion 13. In the step of growing the single crystal 53, the peripheral wall portion 11 is heated to sublimate the material powder 52. In the bottom wall portion 12, a thick region 15 is formed to enclose a central axis α, the thick region 15 being thicker than a connection portion 12C where the bottom wall portion 12 is connected to the peripheral wall portion 11.SELECTED DRAWING: Figure 1
申请公布号 JP2016034880(A) 申请公布日期 2016.03.17
申请号 JP20140157587 申请日期 2014.08.01
申请人 SUMITOMO ELECTRIC IND LTD 发明人 UETA SHUNSAKU;HORI TSUTOMU;MATSUSHIMA AKIRA
分类号 C30B23/06;C30B29/36 主分类号 C30B23/06
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